Defect engineering of the electronic transport through cuprous oxide interlayers
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چکیده
منابع مشابه
Defect engineering of the electronic transport through cuprous oxide interlayers
The electronic transport through Au-(Cu2O)n-Au junctions is investigated using first-principles calculations and the nonequilibrium Green's function method. The effect of varying the thickness (i.e., n) is studied as well as that of point defects and anion substitution. For all Cu2O thicknesses the conductance is more enhanced by bulk-like (in contrast to near-interface) defects, with the excep...
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The various decay mechanisms of excitons in cuprous oxide (Cu2O) are highly sensitive to defects which can relax selection rules. Here we report cryogenic hyperspectral imaging of exciton luminescence from cuprous oxide crystals grown via the floating zone method showing that the samples have few defects. Some locations, however, show strain splitting of the 1s orthoexciton triplet polariton lu...
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Cuprous oxide (Cu2O) is an attractive material for solar energy applications, but its photoconductivity is limited by minority carrier recombination caused by native defect trap states. We examine the creation of trap states by cation vacancies, using first principles calculations based on density functional theory (DFT) to analyze the electronic structure and calculate formation energies. With...
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Cu2O nanoparticles were synthesized by thermal treatment in liquid paraffin without any inert gas protection using nano structures of Schiff base copper (II) complex (1) as precursor. Liquid paraffin was used as solvent and reductant. Span 80 was applied to control the morphology of cuprous oxide nanoparticles. The nano structure of the complex was characterized by X-ray diffraction measurement...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2016
ISSN: 2045-2322
DOI: 10.1038/srep27049